Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2006-06-06
2006-06-06
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S108000, C257S415000, C257S536000
Reexamination Certificate
active
07057248
ABSTRACT:
A semiconductor component, in particular a micromechanical pressure sensor based on silicon, having a base layer, an at least largely self-supporting diaphragm and an overlayer situated on the diaphragm, the diaphragm and the base layer, at least from place to place, delimiting a void. Furthermore, at least from place to place, above the diaphragm a conducting region is provided in the overlayer which is electrically poorly conductive as compared to the conducting region, to which the surface of the diaphragm that faces the overlayer is able to be electrically contacted.
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Artmann Hans
Gomez Udo-Martin
Graf Juergen
Kehr Kersten
Sautter Helmut
Gebremariam Samuel A.
Kenyon & Kenyon
Loke Steven
Robert & Bosch GmbH
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