Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-11
2006-07-11
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S295000, C438S296000
Reexamination Certificate
active
07074681
ABSTRACT:
A semiconductor component includes a substrate (110) having a surface, a channel region (120, 220) located in the substrate, a non-electrically conductive region (130) substantially located below a substantially planar plane defined by the surface of the substrate, a drift region (140, 240) located in the substrate and between the channel region and the non-electrically conductive region, and an electrically floating region (150, 350, 450, 550) located in the substrate and contiguous with the non-electrically conductive region.
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de Fresart Edouard D.
De Souza Richard Joseph
Parris Patrice
Dang Trung
Freescale Semiconductor Inc.
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