Semiconductor component and method of manufacturing

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S295000, C438S296000

Reexamination Certificate

active

07074681

ABSTRACT:
A semiconductor component includes a substrate (110) having a surface, a channel region (120, 220) located in the substrate, a non-electrically conductive region (130) substantially located below a substantially planar plane defined by the surface of the substrate, a drift region (140, 240) located in the substrate and between the channel region and the non-electrically conductive region, and an electrically floating region (150, 350, 450, 550) located in the substrate and contiguous with the non-electrically conductive region.

REFERENCES:
patent: 4300150 (1981-11-01), Colak
patent: 5523601 (1996-06-01), Yanagigawa
patent: 5539238 (1996-07-01), Malhi
patent: 5801431 (1998-09-01), Ranjan
patent: 5844275 (1998-12-01), Kitamura et al.
patent: 5852314 (1998-12-01), Depetro et al.
patent: 6025231 (2000-02-01), Hutter et al.
patent: 6069396 (2000-05-01), Funaki
patent: 6087232 (2000-07-01), Kim et al.
patent: 6110803 (2000-08-01), Tung
patent: 6277706 (2001-08-01), Ishikawa
patent: 6353252 (2002-03-01), Yasuhara et al.
patent: 195 35 140 (1996-03-01), None
patent: 0 295 391 (1988-04-01), None
patent: 0 741 416 (1996-11-01), None
Bergemont et al., “High Voltage Driver Built in a Low Voltage 0.18 μm CMOS for Cache Redundancy Applications in Microprocessors,”ISPSD, May 22-25, 2000, Toulouse, France.
Kim et al., “A 650V rated RESURF-type LDMOS Employing an Internal Clamping Diode for Bulk Breakdown without EPI Layer,”Proceedings of 2001 International Symposium on Power Devices and ICs, Osaka, Japan, Jun. 4-7, 2001, p. 347-350.
PCT/US02/18353 PCT Search Report mailed Apr. 15, 2003.

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