Semiconductor component and method of manufacture

Details Semiconductor component and method of manufacture Semiconductor component and method of manufacture

1998-12-21

2000-04-18

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438204, 438234, 438236, 438286, 438585, H01L 218238, H01L 218249, H01L 21336, H01L 213205, H01L 214763

Patent

active

060514566

ABSTRACT:
A semiconductor component includes an asymmetric transistor having two lightly doped drain regions (1300, 1701), a channel region (1702), a source region (1916) located within the channel region (1702), a drain region located outside the channel region (1702), a dielectric structure (1404) located over at least one of the two lightly doped drain regions (1300, 1701), two gate electrodes (1902, 1903) located at opposite sides of the dielectric structure (1404), a drain electrode (1901) overlying the drain region (1915), and a source electrode (1904) overlying the source region (1916). The semiconductor component also includes another transistor having an emitter electrode (122) located between a base electrode (121) and a collector electrode (123) where the base electrode (121) is formed over a dielectric structure (1405).

REFERENCES:
patent: 4214359 (1980-07-01), Kahng
patent: 4541166 (1985-09-01), Yamazaki
patent: 4795719 (1989-01-01), Eitan
patent: 4852062 (1989-07-01), Baker et al.
patent: 5101257 (1992-03-01), Hayden et al.
patent: 5306652 (1994-04-01), Kwon et al.
patent: 5346835 (1994-09-01), Malhi et al.
patent: 5406110 (1995-04-01), Kwon et al.
patent: 5545572 (1996-08-01), Lee et al.
patent: 5548147 (1996-08-01), Mei
patent: 5578514 (1996-11-01), Kwon et al.
patent: 5661048 (1997-08-01), Davies et al.
patent: 5716866 (1998-02-01), Dow et al.
patent: 5736766 (1998-04-01), Efland et al.
patent: 5930631 (1999-07-01), Wang et al.
patent: 5985707 (1999-11-01), Gil
T. Efland et al., "Lateral Thinking About Power Devices (LDMOS)", IEDM--1998, Session 26, Paper No. 1, pp. 679-682.
C. Tsai et al., "Split Gate MOSFETs in BiCMOS Power Technology for Logic Level Gate Voltage Application", 1999 IEEE-ISPSD Conference, May 26-28, 1999 (Toronto, Canada), pp. 85-88.

Affiliated with

Also associated with

Rating

Semiconductor component and method of manufacture does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor component and method of manufacture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor component and method of manufacture will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2335755