Semiconductor component and method of manufacture

Details Semiconductor component and method of manufacture Semiconductor component and method of manufacture

2010-04-30

2011-10-11

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

08034685

ABSTRACT:
A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shield electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shield electrodes. A gate electrode in at least one of the trenches is connected to at least one shield electrode in the trenches.

REFERENCES:
patent: 6930473 (2005-08-01), Elbanhawy
patent: 7495877 (2009-02-01), Havanur
patent: 2004/0113230 (2004-06-01), Divakaruni et al.
patent: 2010/0123171 (2010-05-01), Yang et al.
patent: 2010/0151643 (2010-06-01), Hirler

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