Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-01-23
2010-12-14
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S585000, C257S367000, C257SE21384
Reexamination Certificate
active
07851312
ABSTRACT:
A semiconductor component that includes a field plate and a semiconductor device and a method of manufacturing the semiconductor component. A body region is formed in a semiconductor material that has a major surface. A gate trench is formed in the epitaxial layer and a gate structure is formed on the gate trench. A source region is formed adjacent the gate trench and extends from the major surface into the body region and a field plate trench is formed that extends from the major surface of the epitaxial layer through the source and through the body region. A field plate is formed in the field plate trench, wherein the field plate is electrically isolated from the sidewalls of the field plate trench. A source-field plate-body contact is made to the source region, the field plate and the body region. A gate contact is made to the gate region.
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Coleman W. David
Dover Rennie William
Kim Su C
Semiconductor Components Industries LLC
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