Semiconductor component and method of manufacture

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S585000, C257S367000, C257SE21384

Reexamination Certificate

active

07851312

ABSTRACT:
A semiconductor component that includes a field plate and a semiconductor device and a method of manufacturing the semiconductor component. A body region is formed in a semiconductor material that has a major surface. A gate trench is formed in the epitaxial layer and a gate structure is formed on the gate trench. A source region is formed adjacent the gate trench and extends from the major surface into the body region and a field plate trench is formed that extends from the major surface of the epitaxial layer through the source and through the body region. A field plate is formed in the field plate trench, wherein the field plate is electrically isolated from the sidewalls of the field plate trench. A source-field plate-body contact is made to the source region, the field plate and the body region. A gate contact is made to the gate region.

REFERENCES:
patent: 6156606 (2000-12-01), Michaelis
patent: 6710403 (2004-03-01), Sapp
patent: 7265398 (2007-09-01), Yu
patent: 2005/0242392 (2005-11-01), Pattanayak et al.
patent: 2006/0060916 (2006-03-01), Girdhar et al.
patent: 2007/0093077 (2007-04-01), Grivna
patent: 2008/0073707 (2008-03-01), Darwish
patent: 2005/053032 (2005-06-01), None
patent: 2005/053032 (2005-06-01), None
patent: 2005/053031 (2005-09-01), None
patent: 2005/053031 (2005-09-01), None
patent: 2005/112128 (2005-11-01), None

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