Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-05
2007-06-05
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S275000, C438S287000, C257SE21639
Reexamination Certificate
active
11118237
ABSTRACT:
The present invention facilitates semiconductor fabrication by providing methods of fabrication that selectively form high-k dielectric layers within NMOS regions. A first oxide layer is formed in core and I/O regions of a semiconductor device (506). The first oxide layer is removed (508) from the core region of the device. A high-k dielectric layer is formed (510) over the core and I/O regions. Then, the high-k dielectric layer is removed (512) from PMOS regions of the core and I/O regions. A second oxide layer is formed (516) within NMOS regions of the core and I/O regions and a nitridation process is performed (518) that nitrides the second oxide layer and the high-k dielectric layer.
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Chambers James Joseph
Colombo Luigi
Visokay Mark Robert
Brady III W. James
McLarty Peter K.
Picardat Kevin M.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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