Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2006-09-14
2009-10-20
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S189090, C365S208000, C365S230060, C365S174000, C345S060000, C345S204000, C345S206000, C257S206000, C257S207000, C257S208000
Reexamination Certificate
active
07606082
ABSTRACT:
The semiconductor circuit includes a voltage-controlled semiconductor device (N)N, the resistance value of which is controllable with a high voltage, the drain terminal of the N can be connected to the gate terminal (control terminal) of an output semiconductor device (NO) via a resistor (R) or to a last output stage of the driver circuit, the source terminal of the N is connected to the emitter terminal of the NO, and the gate terminal of the N is connected to the collector terminal, which is the output terminal, of the NO. When the input terminal of the semiconductor circuit is at the Hi-level, the NOOFF. By connecting the output terminal of the NOto the high-potential-side of a high-voltage circuit disposed separately and the negative electrode of a control power supply (VDD) to the low-potential-side of the high-voltage circuit in the state, in which the NOis OFF, a desired high voltage is applied between the collector and emitter of the NO. Since a p-channel MOSFET (PD) is turned ON as the input terminal potential is changed over to the Lo-level and the high voltage is still being applied to the output terminal of the NO, the N is turned ON and the NOis brought into the ON-state, in which the current driving ability of the NOis low. The semiconductor circuit can protect the devices from an over voltage with a simple circuit configuration.
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Kobayashi Hideto
Shigeta Yoshihiro
Shimabukuro Hiroshi
Tada Gen
Fuji Electric Device Technology Co. Ltd.
Nguyen Van Thu
Rossi Kimms & McDowell LLP
Wendler Eric
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