Semiconductor circuit device having active and standby states

Details Semiconductor circuit device having active and standby states Semiconductor circuit device having active and standby states

2005-04-26

2005-04-26

Tran, Anh Q. (Department: 2819)

Electronic digital logic circuitry

Signal sensitivity or transmission integrity

Signal level or switching threshold stabilization

C326S017000, C326S112000

Reexamination Certificate

active

06885216

ABSTRACT:
A P channel MOS transistor and an N channel MOS transistor turned on/off in response to an input signal in an active state as well as an N channel MOS transistor connected between an output node and the N channel MOS transistor and turned on/off in response to a control signal are provided. The input signal is at the L level in a standby state. The control signal is at the L level in the standby state and at the H level in the active state. This suppresses the effect of hot carriers in the active state and decreases a subthreshold current in the standby state.

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“Ultra LSI Memory”, Kiyoo Ito, Advanced Electronics Series, I-9, BAIFUKAN, Nov. 5, 1994, pp. 365-368.

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