Semiconductor circuit device having a plurality of SRAM type mem

Details Semiconductor circuit device having a plurality of SRAM type mem Semiconductor circuit device having a plurality of SRAM type mem

1988-11-15

1991-01-08

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, 365182, 357 239, 357 236, 437 52, G11C 1140, H01L 2704, H01L 2978

Patent

active

049842005

ABSTRACT:
Herein disclosed is a semiconductor integrated circuit device comprising a SRAM which is composed of a memory cell having its high resistance load element and power source voltage line connected with the information storage node of a flip-flop circuit through a conductive layer. At the same fabrication step as that of forming the plate electrode layer of a capacity element over the conductive layer formed on the portion of the information storage node through a dielectric film, an electric field shielding film for shielding the field effect of a data line is formed over the high resistance load element through an inter-layer insulation film.

REFERENCES:
patent: 4590508 (1986-05-01), Hirakawa et al.
patent: 4679171 (1987-07-01), Logwood et al.
patent: 4774203 (1988-09-01), Ikeda et al.
patent: 4805147 (1989-02-01), Yamanaka et al.
patent: 4828629 (1989-03-01), Ikeda et al.
patent: 4841481 (1989-06-01), Ikeda et al.
Nikkei Microdevices, Aug. 87, pp. 84-86 by Nikkei McGraw-Hill.

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