Semiconductor circuit arrangement with trench isolation and...

Details Semiconductor circuit arrangement with trench isolation and... Semiconductor circuit arrangement with trench isolation and...

2006-06-01

2008-05-06

Sefer, A. (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S734000, C257SE21209, C257SE21682, C257SE21703, C257SE27103, C257SE27112, C257SE29302

Reexamination Certificate

active

07368341

ABSTRACT:
An explanation is given of, inter alia, a circuit arrangement containing a trench which penetrates through a charge-storing layer (18) and a doped semiconductor layer (14). The trench simultaneously fulfils a multiplicity of functions, namely an insulating function between adjacent components, the patterning of the charge-storing layer and also the subdivision of doping layers of the semiconductor layer (14).

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