Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-02-08
2005-02-08
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S370000, C257S371000, C257S503000, C257S507000
Reexamination Certificate
active
06852585
ABSTRACT:
A semiconductor circuit arrangement includes a circuit element embedded in a semiconductor substrate of a first conductivity type in an integrated manner and is provided with at least one gate electrode and first and second terminal electrodes. The first terminal electrode includes a well region that is embedded in the semiconductor substrate and is of a second conductivity type which is opposite the first conductivity type. A sub-well region is embedded in the well region of the first terminal electrode and is of the second conductivity type and has a higher doping than said well region. The sub-well region is embedded in the surface of the substrate and ends without reaching a well region of the gate electrode which is of the first conductivity type.
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Herzum Christian
Krumbein Ulrich
Mueller Karl-Heinz
Infineon - Technologies AG
Schiff & Hardin LLP
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