Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-04-10
1998-07-21
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438 30, 438487, H01L 2184
Patent
active
057834687
ABSTRACT:
Method of fabricating a semiconductor circuit is initiated with formation of an amorphous silicon film. Then, a second layer containing at least one catalytic element is so formed as to be in intimate contact with the amorphous silicon film, or the catalytic element is introduced into the amorphous silicon film. This amorphous silicon film is selectively irradiated with laser light or other equivalent intense light to crystallize the amorphous silicon film.
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Takayama Toru
Takemura Yasuhiko
Zhang Hongyong
Booth Richard A.
Ferguson Jr. Gerald J.
Niebling John
Semiconductor Energy Laboratory Co,. Ltd.
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