Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Reexamination Certificate
2007-08-03
2010-06-08
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Solder wettable contact, lead, or bond
C257SE23081
Reexamination Certificate
active
07732932
ABSTRACT:
Structures and a method for forming the same. The structure includes a semiconductor substrate, a transistor on the semiconductor substrate, and N interconnect layers on top of the semiconductor substrate, N being a positive integer. The transistor is electrically coupled to the N interconnect layers. The structure further includes a first dielectric layer on top of the N interconnect layers and P crack stop regions on top of the first dielectric layer, P being a positive integer. The structure further includes a second dielectric layer on top of the first dielectric layer. Each crack stop region of the P crack stop regions is completely surrounded by the first dielectric layer and the second dielectric layer. The structure further includes an underfill layer on top of the second dielectric layer. The second dielectric layer is sandwiched between the first dielectric layer and the underfill layer.
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Brofman Peter J.
Casey Jon Alfred
Melville Ian D.
Questad David L.
Sauter Wolfgang
Ha Nathan W
International Business Machines - Corporation
Kotulak Richard M.
Schmeiser Olsen & Watts
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