Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Groove
Reexamination Certificate
2008-01-17
2010-11-02
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Groove
C257S773000
Reexamination Certificate
active
07825495
ABSTRACT:
A semiconductor chip structure may include a semiconductor chip, a first insulation layer and a redistribution layer. The first insulation layer may be formed on the semiconductor chip. The first insulation layer may have at least one first groove formed at an upper surface portion of the first insulation layer. Further, the at least one first groove may have an upper width and a lower width greater than the upper width. The redistribution layer may be partially formed on the first insulation layer. The redistribution layer may have at least one first protrusion formed on a lower surface portion of the redistribution layer. The first protrusion may have an upper width and a lower width less than the upper width. The first protrusion may be inserted into the at least one first groove.
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Choi Hee-Kook
Jang Dong-Hyeon
Ryu Seung-Kwan
Sim Sung-Min
Harness Dickey & Pierce P.LC.
Loke Steven
Samsung Electronics Co,. Ltd.
Thomas Kimberly M
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