Semiconductor chip package structure for achieving flip-chip...

Details Semiconductor chip package structure for achieving flip-chip... Semiconductor chip package structure for achieving flip-chip...

2009-12-29

2011-11-08

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Flip chip

C257S098000, C257S433000, C257S690000, C257S692000, C257SE33056, C257SE31110, C257SE23010, C257SE21499, C257SE21599

Reexamination Certificate

active

08053904

ABSTRACT:
A semiconductor chip package structure for achieving flip-chip electrical connection without using a wire-bonding process includes a package unit, a semiconductor chip, a first insulative layer, first conductive layers, a second insulative layer, and second conductive layers. The package unit has a receiving groove. The semiconductor chip is received in the receiving groove and has a plurality of conductive pads disposed on its top surface. The first insulative layer is formed between the conductive pads to insulate the conductive pads. The first conductive layers are formed on the first insulative layer and the package unit, and one side of each first conductive layer is electrically connected to the corresponding conductive pad. The second insulative layer is formed between the first conductive layers in order to insulate the first conductive layers from each other. The second conductive layers are respectively formed on the other opposite sides of the first conductive layers.

REFERENCES:
patent: 7352054 (2008-04-01), Jobetto

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