Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2008-04-24
2010-11-23
Fahmy, Wael M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S686000, C257S774000, C257S777000, C257SE23010, C257SE23023
Reexamination Certificate
active
07838967
ABSTRACT:
A semiconductor chip having through silicon vias (TSV) and a stacked assembly including the chip are revealed. The chip has a plurality of first and second bonding pads disposed on two opposing surfaces of a semiconductor substrate respectively. Through hole vertically penetrate through the semiconductor substrate and the first and second bonding pads. By forming first extruded ring, the first bonding pad has a first contact surface located between the first extruded ring and the through hole. By forming second extruded ring, the second bonding pad has a second contact surface located outside and adjacent to the second extruded rings to encircle the second extruded ring. The second extruded ring has a proper dimension to fit in the first extruded ring. Accordingly, a plurality of semiconductor chip can be stacked each other with accurate alignment without shifting to effectively reduce the stacked assembly height, moreover, chip stacking processes are accomplished by vertically stacking a plurality of chips first then filling conductive material into the through holes without electrical short between the adjacent bonding pads due to overflow of conductive material to meet the fine-pitch requirements of TSV. The process flow for the stacked assembly is simplified with higher production yields.
REFERENCES:
patent: 5408123 (1995-04-01), Murai
patent: 6566232 (2003-05-01), Hara et al.
patent: 6577013 (2003-06-01), Glenn et al.
patent: 6848177 (2005-02-01), Swan et al.
patent: 6908785 (2005-06-01), Kim
patent: 7091592 (2006-08-01), Chen et al.
patent: 2003/0151144 (2003-08-01), Muta et al.
patent: 2008/0032448 (2008-02-01), Simon et al.
Fahmy Wael M
Gumedzoe Peniel M
Muncy Geissler Olds & Lowe, PLLC
Powertech Technology Inc.
LandOfFree
Semiconductor chip having TSV (through silicon via) and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor chip having TSV (through silicon via) and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor chip having TSV (through silicon via) and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4252238