Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2006-12-27
2009-06-16
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257SE23020, C257SE23052, C257SE23146, C257SE25013, C257S301000, C257S302000, C257S754000, C257S760000, C257SE23039, C257S315000, C257S686000, C257S723000, C257S784000, C257S728000, C257S777000, C257S211000, C257S208000
Reexamination Certificate
active
07547977
ABSTRACT:
In one embodiment, a semiconductor chip has one or more peripheral bond pads. The semiconductor chip comprises a semiconductor substrate having a cell region and a peripheral circuit region adjacent to each other; a bond pad-wiring pattern formed on at least a part of the peripheral region of the semiconductor substrate; a passivation layer formed on the bond pad-wiring pattern and exposed portions of the semiconductor substrate; a pad-rearrangement pattern disposed over the passivation layer and electrically connected to the bond pad-wiring pattern; and an insulating layer formed over the pad-rearrangement pattern. The insulating layer has an opening therein that exposes a portion of the pad-rearrangement pattern to define a bond pad. The bond pad is disposed over at least a part of the cell region.
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Choi Il-Heung
Kim Jeong-Jin
Lee Chung-Woo
Sohn Hae-Jeong
Song Young-Hee
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Williams Alexander O
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