Semiconductor channel on insulator structure

Details Semiconductor channel on insulator structure Semiconductor channel on insulator structure

2006-11-21

2006-11-21

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S272000, C438S589000

Reexamination Certificate

active

07138316

ABSTRACT:
A method including forming a via dielectric layer on a semiconductor device substrate; forming a trench dielectric layer on the via dielectric layer; forming a trench through the trench dielectric layer to expose the via dielectric layer; forming a via in the via dielectric layer through the trench to expose the substrate; and forming a semiconductor material in the via and in the trench. An apparatus including a device substrate; a dielectric layer formed on a surface of the device substrate; and a device base formed on the dielectric layer including a crystalline structure derived from the device substrate.

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patent: 19928564 (1999-06-01), None
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patent: WO 0079602 (2000-12-01), None

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