Semiconductor capacitors having tantalum oxide layers and...

Details Semiconductor capacitors having tantalum oxide layers and... Semiconductor capacitors having tantalum oxide layers and...

2005-04-26

2005-04-26

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C438S785000

Reexamination Certificate

active

06884675

ABSTRACT:
Semiconductor capacitors comprise first electrodes, second electrodes, and tantalum oxide layers positioned between the first electrodes and the second electrodes. The tantalum oxide layers are formed by depositing at least one precursor and ozone gas, the at least one precursor represented by the formula:wherein X is selected from the group consisting of nitrogen, sulfur, oxygen, and a carbonyl group; and wherein R1 and R2 are independently alkyl.

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