Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-19
2009-06-09
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27089
Reexamination Certificate
active
07544985
ABSTRACT:
In one embodiment, a semiconductor device comprises a base and a tapered wall formed on the base. The wall has a midline and also has an inner sidewall and an outer sidewall. The inner sidewall and the outer sidewall are substantially symmetrical with each other in relation to the midline. Thus, the reliability of the semiconductor capacitor structure can be improved and the throughput can be increased. Also, further scaling down of semiconductor devices can be facilitated with the principles of the present invention.
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Choi Sang-Jun
Han Jeong-Nam
Hong Chang-Ki
Shim Woo-Gwan
Marger & Johnson & McCollom, P.C.
Movva Amar
Samsung Electronics Co,. Ltd.
Smith Bradley K
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