Semiconductor capacitor

Details Semiconductor capacitor Semiconductor capacitor

1996-03-22

2000-04-11

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257309, 257296, 257310, 257532, 257534, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

060491035

ABSTRACT:
A thin film capacitor structure of a random access memory includes plurality of capacitors formed on an interlayer insulating film. The capacitor structure includes a plurality of lower electrodes formed on the interlayer insulating film, a first dielectric film formed over the plurality of lower electrodes and portions of the interlayer insulating film between lower electrodes, a second dielectric film formed on the first dielectric film, and an upper electrode formed on the second dielectric layer. A silicon oxide film is formed at the step portions of the first dielectric film which result at the periphery of the lower electrodes to prevent leakage current between adjacent capacitors.

REFERENCES:
patent: 5005102 (1991-04-01), Larson
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5122923 (1992-06-01), Matsubara et al.
patent: 5191510 (1993-03-01), Huffman
patent: 5382817 (1995-01-01), Kashihara et al.
patent: 5418388 (1995-05-01), Okudaira et al.
patent: 5442213 (1995-08-01), Okudaira et al.
patent: 5717236 (1998-02-01), Shinkawata
patent: 5774327 (1998-06-01), Park
patent: 5796133 (1998-08-01), Kwon et al.

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