Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2009-03-24
2010-11-23
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S088000, C257S684000, C257S685000, C257S690000, C257S698000, C257S734000
Reexamination Certificate
active
07838878
ABSTRACT:
The disclosure facilitates testing and binning of multiple LED chip or other optoelectronic chip packages fabricated on a single semiconductor wafer. The testing can take place prior to dicing. For example, in one aspect, metallization on the front-side of a semiconductor wafer electrically connects together cathode pads (or anode pads) of adjacent sub-mounts such that the cathode pads (or anode pads) in a given column of sub-mounts are electrically connected together. Likewise, metallization on the back-side of the wafer electrically connects together anode pads (or cathode pads) of adjacent sub-mounts such that the anode pads (or cathode pads) in a given row of sub-mounts are electrically connected together. Probe pads, which can be located one or both sides of the wafer, are electrically connected to respective ones of the rows or columns.
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Haynes and Boone LLP
Pham Long
Taiwan Semiconductor Manufacturing Company , Ltd.
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