Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-04
2009-10-13
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21383
Reexamination Certificate
active
07601584
ABSTRACT:
A method for manufacturing a semiconductor array, particularly a high-frequency bipolar transistor, is provided, the method includes process steps, so that a dielectric is produced on a mono-crystalline, first semiconductor region of a first conductivity type, a silicide layer is deposited and patterned in such a way that the silicide layer is insulated from the first semiconductor region by the dielectric, and, to form a base region, a second semiconductor region of a second conductivity type is applied to the first semiconductor region and to the silicide layer in such a way that the second semiconductor region lies with a first interface on the first semiconductor region and with a second interface on the silicide layer.
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ATMEL Germany GmbH
Kebede Brook
Muncy Geissler Olds & Lowe, PLLC
Tran Tony
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