Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-12-23
2010-11-02
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S217000, C438S218000
Reexamination Certificate
active
07824976
ABSTRACT:
A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2film, a film containing SiO2as a main component and at least one of Hf and Zr, a film containing SiO2as a main component and N, a film containing SiO2as a main component, Hf and N, a film containing SiO2as a main component, Zr and N, or a film containing SiO2as a main component, Hf, Zr and N.
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Eguchi Kazuhiro
Inumiya Seiji
Kaneko Akio
Sato Motoyuki
Sekine Katsuyuki
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Rao Steven H
Weiss Howard
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