Semiconductor and process for fabricating the same

Details Semiconductor and process for fabricating the same Semiconductor and process for fabricating the same

1999-01-13

2000-08-29

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438142, 438 96, 438149, 117 7, 117 8, H01L 2184

Patent

active

061107700

ABSTRACT:
A process for fabricating a semiconductor by crystallizing a silicon film in a substantially amorphous state by annealing it at a temperature not higher than the crystallization temperature of amorphous silicon, and it comprises forming selectively, on the surface or under an amorphous silicon film, a coating, particles, clusters, and the like containing nickel, iron, cobalt, platinum or palladium either as a pure metal or a compound thereof such as a silicide, a salt, and the like, shaped into island-like portions, linear portions, stripes, or dots; and then annealing the resulting structure at a temperature lower than the crystallization temperature of an amorphous silicon by 20 to 150.degree. C.

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