Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Patent
1995-03-06
1997-04-08
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
257417, 257418, 257420, 7351421, 7351422, 7351436, 7351437, 73DIG1, H01L 2982
Patent
active
056190506
ABSTRACT:
A semiconductor acceleration sensor capable of reducing a leakage current and manufacturing method thereof is disclosed. A beam structure is disposed on a silicon substrate. The beam structure has a movable section, and the movable section is disposed spaced at a prescribed distance above silicon substrate. A movable electrode section is formed in one portion of movable section. Fixed electrodes made of an impurity diffusion layer are formed in silicon substrate to correspond to both sides of a movable electrode section. A peripheral circuit is formed in silicon substrate. The beam structure and the peripheral circuit are electrically connected by an electroconductive thin film, made of polysilicon. Then, when a voltage is applied to the beam structure, and a voltage is applied to both fixed electrodes, an inversion layer is formed, and an electrical current flows between the fixed electrodes. In the case where an acceleration is received and movable section is displaced, the electrical current flowing between the fixed electrodes changes.
REFERENCES:
patent: 4674319 (1987-06-01), Muller et al.
patent: 4930043 (1990-05-01), Wiegand
patent: 5126812 (1992-06-01), Greiff
patent: 5326726 (1994-07-01), Tsang et al.
patent: 5343064 (1994-08-01), Spangler et al.
patent: 5352918 (1994-10-01), Thomas et al.
Core et al: "Fabrication Technology for an IntergratedSurface-Micromachined Sensor", Sonic State Technology Oct. 1993, pp. 39-47.
Nathanson, et al: "The Resonant Gate Transistor", I3EEE Transactions On Electron Divices, vol. ED-14, No. 3, Mar. 1967, pp. 117-132.
Nathanson, et al: "A Resonant-Gate Silicon Surface Transistor with High-Q Band-Pass Properties", Applied Physics Letters, vol. 7, No. 4, Aug. 15, 1965. pp. 84-86.
Ao Kenichi
Kanosue Masakazu
Suzuki Yasutoshi
Takeuchi Yukihiro
Uenoyama Hirofumi
Mintel William
Nippondenso Co. Ltd.
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