Semiconductive memory device capable of carrying out a write-in

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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Details

36523006, 36523008, 365233, G11C 1604

Patent

active

060143339

ABSTRACT:
A semiconductive memory device has a plurality of memory cells and writing data in a specific one of the memory cells in accordance with a write-in address. The semiconductive memory device comprises a control signal producing section for producing a plurality of control signals in accordance with a synchronous signal. The control signals have phases different from one another. A column selection signal producing section is responsive to the write-in address and the control signals for producing a plurality of column selection signals. A latch section is for latching the data as latched data in synchronism with the control signals. A write bus section supplies the latched data to the memory cells. A write-in section writes the latched data on the write bus means in the specific memory cell in accordance with the column selection signals.

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