Static information storage and retrieval – Read/write circuit – Data refresh
Patent
1994-12-19
1996-12-10
Zarabian, A.
Static information storage and retrieval
Read/write circuit
Data refresh
365233, 365236, G11C 700
Patent
active
055838189
ABSTRACT:
A self-refresh method and refresh control circuit of a semiconductor memory device, wherein after the self-refresh mode starts, the burst refresh mode is performed prior to the self-refresh mode; or the self-refresh mode is performed immediately after going into the self-refresh mode, and the burst refresh mode is performed at the completion of the self-refresh mode, and then the burst refresh mode is converted to the normal access mode; or the burst refresh mode is performed before and after the self-refresh mode, thereby shortening a refresh regulation time and securing a stable refresh of the memory cells.
REFERENCES:
patent: 4989183 (1991-01-01), Kumanoya
patent: 5467315 (1995-11-01), Kajimoto
Jun Dong-Soo
You Jei-Hwan
Samsung Electronics Co,. Ltd.
Zarabian A.
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