Self-cleaning plasma processing reactor

Details Self-cleaning plasma processing reactor Self-cleaning plasma processing reactor

1997-11-21

1999-03-09

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

438905, 438729, 118723I, 118723MP, 156345, H05H 100

Patent

active

058795758

ABSTRACT:
A method for simultaneously processing a workpiece using a plasma and cleaning the reactor in which processing takes place is disclosed. The plasma generated in the reactor performs simultaneous workpiece processing and reactor cleaning. Reactor cleaning may be accomplished by directing a portion of the plasma at an inner surface of the reactor such as by a power source auxiliary to that used to produce the processing plasma. An apparatus for carrying out a method for simultaneously processing a workpiece with a plasma and cleaning a reactor of etch residues generated from processing is disclosed.

REFERENCES:
patent: 4786392 (1988-11-01), Kruchowski et al.
patent: 5252178 (1993-10-01), Moslehi
patent: 5431769 (1995-07-01), Kisakibaru et al.
patent: 5514246 (1996-05-01), Blalock
patent: 5523261 (1996-06-01), Sandhu

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