Etching a substrate: processes – Etching and coating occur in the same processing chamber
Patent
1997-11-12
2000-10-24
Stinson, Frankie L.
Etching a substrate: processes
Etching and coating occur in the same processing chamber
216 67, 438710, 438905, 134 21, 134 221, B08B 900
Patent
active
061362115
ABSTRACT:
A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.
REFERENCES:
patent: 4282267 (1981-08-01), Kuyel
patent: 4433228 (1984-02-01), Nishimatsu et al.
patent: 4465532 (1984-08-01), Fukano
patent: 4490209 (1984-12-01), Hartman
patent: 4502914 (1985-03-01), Trumpp et al.
patent: 4576692 (1986-03-01), Fukuta et al.
patent: 4705595 (1987-11-01), Okudaira et al.
patent: 4738748 (1988-04-01), Kisa
patent: 4818326 (1989-04-01), Liu et al.
patent: 4831963 (1989-05-01), Saito et al.
patent: 4863561 (1989-09-01), Freeman et al.
patent: 4867841 (1989-09-01), Loewenstein et al.
patent: 4876212 (1989-10-01), Koury
patent: 4992136 (1991-02-01), Tachi et al.
patent: 4994410 (1991-02-01), Sun et al.
patent: 5002632 (1991-03-01), Loewenstein et al.
patent: 5013398 (1991-05-01), Long et al.
patent: 5035768 (1991-07-01), Mu et al.
patent: 5084126 (1992-01-01), McKee
patent: 5094712 (1992-03-01), Becker et al.
patent: 5110408 (1992-05-01), Fujii et al.
patent: 5110411 (1992-05-01), Long
patent: 5118387 (1992-06-01), Kadomura
patent: 5158644 (1992-10-01), Cheung et al.
patent: 5160407 (1992-11-01), Latchford et al.
patent: 5164330 (1992-11-01), Davis et al.
patent: 5176792 (1993-01-01), Fullowan et al.
patent: 5188980 (1993-02-01), Lai
patent: 5192702 (1993-03-01), Tseng
patent: 5256245 (1993-10-01), Keller et al.
patent: 5281302 (1994-01-01), Gabric et al.
patent: 5282899 (1994-02-01), Balmashinov et al.
patent: 5312519 (1994-05-01), Sakai et al.
patent: 5318668 (1994-06-01), Tamaki et al.
patent: 5338398 (1994-08-01), Szwejkowski et al.
patent: 5354417 (1994-10-01), Cheung et al.
patent: 5356478 (1994-10-01), Chen et al.
patent: 5358601 (1994-10-01), Cathey
patent: 5378311 (1995-01-01), Nagayama et al.
patent: 5382316 (1995-01-01), Hills et al.
patent: 5413954 (1995-05-01), Aydil et al.
patent: 5431772 (1995-07-01), Babie et al.
patent: 5443686 (1995-08-01), Jones et al.
patent: 5449411 (1995-09-01), Fukuda et al.
patent: 5514622 (1996-05-01), Bornstein et al.
patent: 5521119 (1996-05-01), Chen et al.
patent: 5529197 (1996-06-01), Grewal
patent: 5620615 (1997-04-01), Keller
patent: 5626775 (1997-05-01), Roberts et al.
patent: 5644153 (1997-07-01), Keller
patent: 5753533 (1998-05-01), Saito
patent: 5767021 (1998-06-01), Imai et al.
patent: 5788799 (1998-08-01), Steger et al.
patent: 5843239 (1998-12-01), Shrotriya
patent: 5866483 (1999-02-01), Shiau et al.
patent: 5869401 (1999-02-01), Brunemeier et al.
patent: 5874363 (1999-02-01), Hoh et al.
PCT Notification of Transmittal of the International Search Report, dated Feb. 4, 1999.
PCT International Preliminary Examination Report dated Feb. 14, 2000.
Hillenius, S.J., et al., "A Symmetric Submicron CMOS Technology," IEEE, pp. 252-255, 1986.
PCT Search Report dated Oct. 28, 1999.
Aydil, et al., "Multiple Steady States in a Radio Frequency Chlorine Glow Discharge," J. Appl. Phys., vol. 69, No. 1, Jan. 1, 1991, pp. 109-114.
U.S. Patent Application entitled, "Method for Improved Cleaning of Substrate Processing System"; filed Jul. 11, 1997; Serial No. Unknown; Inventors: Kao, et al.; Attorney Docket No. 2027.
U.S. Patent Application entitled, "Apparatus for Improved Remote Microwave Plasma source for Use with Substrate Processing Systems"; filed Apr. 23, 1997; Serial No. 08/839,111; Inventors: Kao, et al.; Attorney Docket No. 1975.
U.S. Patent Application entitled, "Method and Apparatus for Determining the Endpoint in a Plasma Cleaning Process"; filed Jul. 2, 1997; Serial No. 08/887,165; Inventors: Subrahmanyam, et al.; Attorney Docket No. 1852.
U.S. Patent Application entitled, "Apparatus and Method for Efficient and Compact Remote Microwave Plasma Generation"; filed Apr. 22, 1997; Serial No. 08/839,007; Inventor: Bhatnagar; Attorney Docket No. 1772.
U.S. Patent Application entitled, "Method and Apparatus for Pre-stabilized Plasma Generation for Microwave Clean Applications"; filed Nov. 13, 1996; Serial No. 08/746,658; Inventors: Fong, et al.; Attorney Docket No. 1680-14.
U.S. Patent Application entitled, "Inductively Coupled HDP-CVD Reactor"; filed May 29, 1997; Serial No. 08/865,018; Inventors: Redeker, et al.; Attorney Docket No. 1570-02.
U.S. Patent Application entitled, "Symmetric Tunable Inductively Coupled HDP-CVD Reactor"; filed Jul. 15, 1996; Serial No. 08/679,927; Inventors: Redeker, et al.; Attorney Docket No. 1570.
U.S. Patent Application entitled, "Apparatus and Methods for Upgraded Substrate Processing System with Microwave Plasma Source"; filed Mar. 5, 1997; Serial No. 08/811,627; Inventors: Tanaka, et al.; Attorney Docket No. 1480.
U.S. Patent Application entitled, "Microwave Apparatus for In-situ Vacuum Line cleaning for Substrate Processing Equipment"; filed Oct. 30, 1996; Serial No. 08/741,241; Inventors: Pang, et al.; Attorney Docket No. 1529.
Chen Arthur Y.
Chinn Jeffrey
Jiang Wei-nan
Kuo Ming-Hsun
Mui David S. L.
Applied Materials Inc.
Olsen Allan
Stinson Frankie L.
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