Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1993-06-11
1994-11-08
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429811, 20429812, C23C 1434
Patent
active
053623720
ABSTRACT:
A self cleaning collimator is provided which avoids a buildup of deposited material such that the collimator does not become clogged, deposition rates remain constant and flakes of deposited material are not formed. The collimator is formed of a dielectric material. The collimator and the target are physically mounted in contact with one another. During a deposition process, a portion of the deposited material will unavoidably also be deposited onto the walls of the passages through the collimator. Eventually, the buildup of such deposited material will provide an electrical path from the deposited material to the target. When this occurs, the electrical path will allow the material deposited on the walls of the passages through the collimator to act as a portion of the target. This material will then be depleted as it is deposited onto the semiconductor wafer 112.
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patent: 5202008 (1993-04-01), Talieh et al.
patent: 5223108 (1993-06-01), Hurwitt
Lester et al., "Sputtering Cathode Glow Discharge Suppression Shields", IBM Tech. Dis Bulletin, vol. 20, No. 3, Aug. 1977, pp. 1177-1178.
Applied Materials Inc.
Haverstock Thomas B.
Nguyen Nam
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