Self-assembly pattern for semiconductor integrated circuit

Details Self-assembly pattern for semiconductor integrated circuit Self-assembly pattern for semiconductor integrated circuit

2009-10-31

2011-11-01

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S128000, C438S589000, C438S700000, C257SE21536, C257SE21575, C257SE21602

Reexamination Certificate

active

08048795

ABSTRACT:
A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature.

REFERENCES:
patent: 2004/0175628 (2004-09-01), Nealey et al.
patent: 2009/0240001 (2009-09-01), Regner

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