Self-aligned trench transistor using etched contact

Details Self-aligned trench transistor using etched contact Self-aligned trench transistor using etched contact

2005-08-02

2005-08-02

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S268000, C438S272000

Reexamination Certificate

active

06924198

ABSTRACT:
A trench-gated MOSFET formed using a super self aligned (SSA) process employs an insulating layer such as a glass layer and a contact mask to define contact openings for electrical connections to source regions of the MOSFET. Use a contact mask and an intervening glass in otherwise self-aligned process reduces the coupling capacitance between source metal and the top of the embedded trench gate. A metal layer deposited to make electrical contact to source regions can be planarized, for example, ground flat using chemical-mechanical polishing to provide a flat surface to avoid formation of conductive traces that extend over the steps that the glass layer forms.

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