Self-aligned trench MOSFETs and methods for making the same

Details Self-aligned trench MOSFETs and methods for making the same Self-aligned trench MOSFETs and methods for making the same

2006-07-18

2006-07-18

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S589000, C438S667000, C438S675000, C438S695000, C438S700000, C438S760000

Reexamination Certificate

active

07078296

ABSTRACT:
Self-aligned trench MOSFETs and methods for manufacturing the same are disclosed. By having a self-aligned structure, the number of MOSFETS per unit area—the cell density—is increased, making the MOSFETs cheaper to produce. The self-aligned structure for the MOSFET is provided by making the sidewall of the overlying isolation dielectric layer substantially aligned with the sidewall of the gate conductor. Such an alignment can be made through any number of methods such as using a dual dielectric process, using a selective dielectric oxidation process, using a selective dielectric deposition process, or a spin-on-glass dielectric process.

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