Self-aligned trench field effect transistors with regrown...

Details Self-aligned trench field effect transistors with regrown... Self-aligned trench field effect transistors with regrown...

2008-01-01

2008-01-01

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S269000, C438S270000, C257SE29256

Reexamination Certificate

active

11293261

ABSTRACT:
Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source fingers. Methods of making bipolar junction transistors with self-aligned regrown base contact regions and methods of making these devices are also described. The semiconductor devices can be made in silicon carbide.

REFERENCES:
patent: 4587712 (1986-05-01), Baliga
patent: 5350699 (1994-09-01), Nii
patent: 5859447 (1999-01-01), Yang et al.
patent: 6049098 (2000-04-01), Sato
patent: 6455364 (2002-09-01), Asai et al.
patent: 6767783 (2004-07-01), Casady et al.
patent: 2001/0009800 (2001-07-01), Hijzen et al.
patent: 2002/0192894 (2002-12-01), Kalnitsky et al.
patent: 2003/0098465 (2003-05-01), Suzumura et al.
patent: 2004/0051136 (2004-03-01), Kataoka et al.
patent: 2005/0233539 (2005-10-01), Takeuchi et al.
patent: 1 128 429 (2001-08-01), None
L. Cheng et al, “Cryogenic and High Temperature Performance of 4H-SiC Vertical Junction Field Effect Transistors (VJFETs) for Space Applications”, Proceedings ofThe 17th International Symposiium on Power Semiconductor Devices and IC's(ISPSD '05), May 22-26, 2005, Santa Barbara, CA.
C. Li et al, “Selective Growth of 4H-SiC on 4H-SiC Substrates Using a High Temperature Mask”,Materials Science Forumvols. 457-460 (2004) pp. 185-188.
J. N. Merrett et al, “Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs”,5th European Conference on Silicon Carbide and Related Materials(ECSCRM2004), Aug. 31-Sep. 4, 2004, Bologna, Italy.
Li et al., “Fabrication and Characterization of 4H-SiC P-N Junction Diodes by Selective—Epitaxial Growth Using TaC as the Mask,” Journal of Electronic Materials, vol. 34, No. 4 (2005).

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