Self-aligned trench field effect transistors with regrown...

Details Self-aligned trench field effect transistors with regrown... Self-aligned trench field effect transistors with regrown...

2008-01-01

2008-01-01

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S269000, C438S270000, C257SE29256

Reexamination Certificate

active

07314799

ABSTRACT:
Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source fingers. Methods of making bipolar junction transistors with self-aligned regrown base contact regions and methods of making these devices are also described. The semiconductor devices can be made in silicon carbide.

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