Self-aligned strap for embedded trench memory on hybrid...

Details Self-aligned strap for embedded trench memory on hybrid... Self-aligned strap for embedded trench memory on hybrid...

2006-10-05

2010-06-15

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S347000, C257S401000

Reexamination Certificate

active

07737482

ABSTRACT:
Structures including a self-aligned strap for embedded trench memory (e.g., trench capacitor) on hybrid orientation technology (HOT) substrate, and related method, are disclosed. One structure includes a hybrid orientation substrate including a semiconductor-on-insulator (SOI) section and a bulk semiconductor section; a transistor over the SOI section; a trench capacitor in the bulk semiconductor section; and a self-aligned strap extending from a source/drain region of the transistor to an electrode of the trench capacitor. The method does not require additional masks to generate the strap, results in a self-aligned strap and improved device performance. In one embodiment, the strap is a silicide strap.

REFERENCES:
patent: 2007/0057302 (2007-03-01), Ho et al.

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