Self-aligned split-gate NAND flash memory and fabrication...

Details Self-aligned split-gate NAND flash memory and fabrication... Self-aligned split-gate NAND flash memory and fabrication...

2007-05-15

2007-05-15

Elms, Richard T. (Department: 2824)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S320000, C257S321000, C257SE21422, C438S258000, C438S264000, C438S265000

Reexamination Certificate

active

11281182

ABSTRACT:
Self-aligned split-gate NAND flash memory cell array and process of fabrication in which rows of self-aligned split-gate cells are formed between a bit line diffusion and a common source diffusion in the active area of a substrate. Each cell has control and floating gates which are stacked and self-aligned with each other, and erase and select gates which are split from and self-aligned with the stacked gates, with select gates at both ends of each row which partially overlap the bit line the source diffusions. The channel regions beneath the erase gates are heavily doped to reduce the resistance of the channel between the bit line and source diffusions, and the floating gates are surrounded by the other gates in a manner which provides significantly enhanced high voltage coupling to the floating gates from the other gates. The memory cells are substantially smaller than prior art cells, and the array is biased so that all of the memory cells in it can be erased simultaneously, while programming is bit selectable.

REFERENCES:
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 5050125 (1991-09-01), Momodomi et al.
patent: 6214669 (2001-04-01), Hisamune
patent: 6486509 (2002-11-01), Van Houdt
patent: 6818512 (2004-11-01), Hsieh
patent: 6861700 (2005-03-01), Guterman et al.
patent: 6962848 (2005-11-01), Leung et al.
patent: 2002/0102793 (2002-08-01), Wu
patent: 2003/0146465 (2003-08-01), Wu

Affiliated with

Also associated with

Rating

Self-aligned split-gate NAND flash memory and fabrication... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned split-gate NAND flash memory and fabrication..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned split-gate NAND flash memory and fabrication... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3751226