Self-aligned source process

Details Self-aligned source process Self-aligned source process

1998-05-15

2000-04-25

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438258, 438302, H01L 21336

Patent

active

060543485

ABSTRACT:
A process for creating a semiconductor memory device, featuring the formation of FOX regions, after the creation of a source region, has been developed. The process features a source region, self-aligned to a first set of stacked gate structures, with the subsequent FOX region placed perpendicular to the source region, between a second set of stacked gate structures.

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