Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Patent
1997-11-07
1999-08-10
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
257412, H01L 21336
Patent
active
059373156
ABSTRACT:
A deep submicron MOS device having a self-aligned silicide gate structure and a method for forming the same is provided so as to overcome the problems of poly-Si depletion and boron penetration. A first Nickel silicide layer is formed between a gate oxide and a polycrystalline silicon gate electrode. Further, second Nickel silicide layers are formed over highly-doped source/drain regions. In this fashion, the reliability of the MOS device will be enhanced.
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J.J.Appl. Phys. vol.29 No. 12, Dec. 1, 1990 pp.2698-2704.
J.J.Appl. Phys. vol.29 No. 4 Apr. 1, 1990 pp.729-738.
Lin Ming-Ren
Pramanick Shekhar
Xiang Qi
Advanced Micro Devices , Inc.
Blum David S.
Bowers Charles
Chin Davis
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