Self-aligned silicidation technique to independently form silici

Details Self-aligned silicidation technique to independently form silici Self-aligned silicidation technique to independently form silici

1997-06-30

1999-09-14

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438233, 438592, 438759, H01L 21336

Patent

active

059536128

ABSTRACT:
A technique for self-aligned silicidation of semiconductor devices is disclosed. This technique includes the formation of polysilicon device features extending from a semiconductor substrate. A coating is deposited on the features and substrate. Chemical mechanical polishing is performed to remove a portion of the coating to expose a polysilicon surface of the features. A metallic layer is formed to contact the exposed polysilicon surface of each of the features. A silicide layer is formed for each feature from the polysilicon and the metallic layer in contact therewith.

REFERENCES:
patent: 4514233 (1985-04-01), Kawabuchi
patent: 4803173 (1989-02-01), Sill et al.
patent: 4935376 (1990-06-01), Hillenius et al.
patent: 5268330 (1993-12-01), Givens et al.
patent: 5310692 (1994-05-01), Chan et al.
patent: 5366911 (1994-11-01), Lur et al.
patent: 5411909 (1995-05-01), Manning et al.
patent: 5434093 (1995-07-01), Chau et al.
patent: 5447875 (1995-09-01), Moslehi
patent: 5496771 (1996-03-01), Cronin et al.
patent: 5516716 (1996-05-01), Hawkins et al.
patent: 5545579 (1996-08-01), Liang et al.
patent: 5585661 (1996-12-01), McLachlan et al.
patent: 5610083 (1997-03-01), Chan et al.
patent: 5633187 (1997-05-01), Hsu
patent: 5683941 (1997-11-01), Kao et al.
patent: 5843834 (1998-12-01), Naem

Affiliated with

Also associated with

Rating

Self-aligned silicidation technique to independently form silici does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned silicidation technique to independently form silici, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned silicidation technique to independently form silici will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1519706