Self-aligned silicidation of TFT source-drain region

Details Self-aligned silicidation of TFT source-drain region Self-aligned silicidation of TFT source-drain region

1997-06-30

1998-11-10

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438158, 438159, 438160, H01L 21265

Patent

active

058343423

ABSTRACT:
A process for manufacturing a thin film transistor for use in a CMOS SRAM circuit is described. A key feature is the formation of two different photoresist masks from the same optical mask. The first photoresist mask is generated using a normal amount of actinic radiation during exposure and is used to protect the gate region during source and drain formation through ion implantation. The second photoresist mask is aligned relative to the gate in exactly the same orientation as the first mask but is given a reduced exposure of actinic radiation. This results, after development, in a slightly larger mask which is used during etching to form the oxide cap that will protect the channel area during the subsequent silicidation step. Making the cap slightly wider than the channel ensures that small lengths of the source and the drain regions that abut the channel are not converted to silicide. Thus, the finished device continues to act as a thin film transistor, but has greatly reduced source and drain resistances.

REFERENCES:
patent: 5403759 (1995-04-01), Havemann
patent: 5495119 (1996-02-01), Ikeuchi
patent: 5496752 (1996-03-01), Nasu et al.
patent: 5576556 (1996-11-01), Takemura et al.
patent: 5612235 (1997-03-01), Wu et al.
patent: 5696011 (1997-12-01), Yamazaki et al.
patent: 5728604 (1998-03-01), Rha et al.
patent: 5736436 (1998-04-01), Matsumoto et al.

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