Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including isolation structure
Reexamination Certificate
2011-07-19
2011-07-19
Blum, David S (Department: 2813)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including isolation structure
C438S680000, C438S689000, C257SE45001
Reexamination Certificate
active
07981755
ABSTRACT:
The present invention in one embodiment provides a method of manufacturing an electrode that includes providing at least one metal stud positioned in a via extending into a first dielectric layer, wherein an electrically conductive liner is positioned between at least a sidewall of the via and the at least one metal stud; recessing an upper surface of the at least one metal stud below an upper surface of the first dielectric layer to provide at least one recessed metal stud; and forming a second dielectric atop the at least one recessed metal stud, wherein an upper surface of the electrically conductive liner is exposed.
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Breitwisch Matthew J.
Joseph Eric A.
Lam Chung H.
Schrott Alejandro G.
Yee Brandon
Alexanian Vazken
Blum David S
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
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