Self-aligned processing of semiconductor device features

Details Self-aligned processing of semiconductor device features Self-aligned processing of semiconductor device features

1997-06-30

2000-06-13

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438592, H01L 21336

Patent

active

060749210

ABSTRACT:
A technique for self-aligned processing of semiconductor device features is disclosed. This technique includes the formation of a semiconductor device with features extending from the plane of a semiconductor substrate. The features may include polysilicon transistor gates. A coating is deposited on the features and substrate. Chemical mechanical polishing is performed to remove a portion of the coating to expose a surface of the features without lithographic processing. In one form, the exposed surface of the feature is defined by a polysilicon member, and the polysilicon member is at least partially selectively removed and replaced with a metal.

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