Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2002-12-20
2008-08-05
Nguyen, Tuan H (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S478000
Reexamination Certificate
active
07407849
ABSTRACT:
A method for forming an organic or partly organic switching device. The method comprises depositing layers of conducing, semiconducting and/or insulating layers by solution processing and direct printing. Then, high-resolution patterns of electroactive polymers are formed by self-aligned formation of a surface energy barrier around a first pattern that repels the solution of a second material.
REFERENCES:
patent: 6810814 (2004-11-01), Hasei
patent: 2004/0029382 (2004-02-01), Kawase
patent: 2 373 095 (2002-09-01), None
patent: WO 01 47043 (2001-06-01), None
patent: WO 01 47045 (2001-06-01), None
Kawase T. et al: “All-polymer thin film transistors fabricated by high-resolution ink-jet printing” International Electron Devices Meeting 2000. Technical Digest. IEDM (CAT No. 00CH37138), San Francisco, CA, USA, Dec. 10-13, 2000, pp. 623-626, XP002234841 2000 Piscataway, NJ,USA, IEE, USA ISBN: 0-7803-6438-4.
Banach Michael J.
Huck Wilhelmus Theodorus Stefanus
Mackenzie John Devin
Sele Christoph Wilhelm
Sirringhaus Henning
Cambridge University Technical Services Limited
Nguyen Tuan H
Plastic Logic Limited
Sughrue & Mion, PLLC
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