Self-aligned photoresist process

Details Self-aligned photoresist process Self-aligned photoresist process

1981-12-31

1983-04-12

Smith, John D.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

427 96, 427 99, 430290, 430315, 430326, 430395, H05K 306, H05K 346

Patent

active

043798330

ABSTRACT:
A self-aligned photoresist process for selectively covering a pattern on a substrate with photoresist without using a mask or needing an alignment step. It may be used when the pattern to be covered or not covered has a much different reflectivity than the non-pattern areas. A photoresist layer is deposited over the substrate and exposed to a flood beam. The higher reflectivity regions reflect much more exposing radiation and cause increased exposure in the regions overlying the higher reflectivity pattern. Upon development, the more exposed regions (or in the case of a negative resist, the less exposed regions) preferentially develop away, leaving a resist pattern corresponding with the reflective pattern and aligned therewith. This process can be used, for example, to cover a substrate with resist everywhere except at metallized areas.

REFERENCES:
patent: 4174219 (1979-11-01), Andres et al.
patent: 4293624 (1981-10-01), Buckley

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