Self aligned non-volatile memory cell and process for...

Details Self aligned non-volatile memory cell and process for... Self aligned non-volatile memory cell and process for...

2006-09-12

2006-09-12

Lee, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C257S314000, C257S315000

Reexamination Certificate

active

07105406

ABSTRACT:
Floating gate structures are disclosed that have a projection that extends away from the surface of a substrate. This projection may provide the floating gate with increased surface area for coupling the floating gate and the control gate. In one embodiment, the word line extends downwards on each side of the floating gate to shield adjacent floating gates in the same string. In another embodiment, a process for fabricating floating gates with projections is disclosed. The projection may be formed so that it is self-aligned to the rest of the floating gate.

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