Self-aligned nanotube field effect transistor and method of...

Details Self-aligned nanotube field effect transistor and method of... Self-aligned nanotube field effect transistor and method of...

2007-08-07

2007-08-07

Hu, Shouxiang (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S431000, C438S778000, C438S787000, C977S842000, C977S938000

Reexamination Certificate

active

10956851

ABSTRACT:
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

REFERENCES:
patent: 6515339 (2003-02-01), Shin et al.
patent: 6524920 (2003-02-01), Yu
patent: 2003/0130333 (2003-07-01), Chan et al.
patent: 2003/0148562 (2003-08-01), Lyuken et al.
patent: 2004/0043588 (2004-03-01), Wang et al.
patent: 2004/0144972 (2004-07-01), Dai et al.
patent: 02/03482 (2002-01-01), None

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