Self-aligned methods of fabricating silicon carbide power device

Details Self-aligned methods of fabricating silicon carbide power device Self-aligned methods of fabricating silicon carbide power device

1998-06-08

2000-08-22

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438138, 438268, 438931, 438519, 438522, H01L 21336

Patent

active

061071420

ABSTRACT:
Silicon carbide power devices are fabricated by implanting p-type dopants into a silicon carbide substrate through an opening in a mask, to form a deep p-type implant. N-type dopants are implanted into the silicon carbide substrates through the same opening in the mask, to form a shallow n-type implant relative to the p-type implant. Annealing is then performed at temperature and time that is sufficient to laterally diffuse the deep p-type implant to the surface of the silicon carbide substrate surrounding the shallow n-type implant, without vertically diffusing the p-type implant to the surface of the silicon carbide substrate through the shallow n-type implant. Accordingly, self-aligned shallow and deep implants may be performed by ion implantation, and a well-controlled channel may be formed by the annealing that promotes significant diffusion of the p-type dopant having high diffusivity, while the n-type dopant having low diffusivity remains relatively fixed. Thereby, a p-base may be formed around an n-type source. Lateral and vertical power MOSFETs may be fabricated.

REFERENCES:
patent: 3629011 (1971-12-01), Tohi et al.
patent: 5348895 (1994-09-01), Smayling et al.
patent: 5384270 (1995-01-01), Ueno
patent: 5459089 (1995-10-01), Baliga
patent: 5510281 (1996-04-01), Ghezzo et al.
patent: 5710059 (1998-01-01), Rottner
patent: 5712502 (1998-01-01), Mitlehner et al.
patent: 5804483 (1998-09-01), Harris
patent: 5837572 (1998-11-01), Gardner et al.
patent: 5849620 (1998-12-01), Harris et al.
patent: 5851908 (1998-12-01), Harris et al.
patent: 5877041 (1999-03-01), Fuller
Shenoy et al., "High-Voltage Double-Implanted Power MOSFET's in 6H-SiC", IEEE Electron Device Letters, vol., 18, No. 3, Mar. 1997, pp. 93-95.
International Search Report, PCT/US 99/12714, Sep. 29, 1999.

Affiliated with

Also associated with

Rating

Self-aligned methods of fabricating silicon carbide power device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned methods of fabricating silicon carbide power device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned methods of fabricating silicon carbide power device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-580233