Self-aligned metal electrode to eliminate native oxide...

Details Self-aligned metal electrode to eliminate native oxide... Self-aligned metal electrode to eliminate native oxide...

2007-01-12

2009-11-24

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S303000, C257SE27093

Reexamination Certificate

active

07622347

ABSTRACT:
A method of forming a capacitor comprising the following steps. An inchoate capacitor is formed on a substrate within a capacitor area whereby portions of the substrate separate the inchoate capacitor from isolating shallow trench isolation (STI) structures. STIs. A first dielectric layer is formed over the structure. The first dielectric layer is patterned to: form a portion masking the inchoate capacitor; and expose at least portions of the STIs and the substrate portions separating the inchoate capacitor from the shallow trench isolation structures. Metal portions are formed at least over the substrate portions. A second dielectric layer is formed over the patterned first dielectric layer portion, the metal portions and the STIs, whereby the metal portions formed at least over the substrate portions prevent formation of native oxide on at least the substrate portions. The invention also includes the structures formed thereby.

REFERENCES:
patent: 5741734 (1998-04-01), Lee
patent: 6168984 (2001-01-01), Yoo et al.
patent: 6468855 (2002-10-01), Leung et al.
patent: 6661049 (2003-12-01), Tzeng et al.
patent: 6841821 (2005-01-01), Hsu

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